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IXTQ30N60P

IXTQ30N60P

For Reference Only

Part Number IXTQ30N60P
PNEDA Part # IXTQ30N60P
Description MOSFET N-CH 600V 30A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,190
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ30N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ30N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ30N60P, IXTQ30N60P Datasheet (Total Pages: 6, Size: 352.2 KB)
PDFIXTV30N60PS Datasheet Cover
IXTV30N60PS Datasheet Page 2 IXTV30N60PS Datasheet Page 3 IXTV30N60PS Datasheet Page 4 IXTV30N60PS Datasheet Page 5 IXTV30N60PS Datasheet Page 6

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IXTQ30N60P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs240mOhm @ 15A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5050pF @ 25V
FET Feature-
Power Dissipation (Max)540W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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