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IXTQ26P20P

IXTQ26P20P

For Reference Only

Part Number IXTQ26P20P
PNEDA Part # IXTQ26P20P
Description MOSFET P-CH 200V 26A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,136
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 20 - Nov 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ26P20P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ26P20P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ26P20P, IXTQ26P20P Datasheet (Total Pages: 6, Size: 184.65 KB)
PDFIXTQ26P20P Datasheet Cover
IXTQ26P20P Datasheet Page 2 IXTQ26P20P Datasheet Page 3 IXTQ26P20P Datasheet Page 4 IXTQ26P20P Datasheet Page 5 IXTQ26P20P Datasheet Page 6

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IXTQ26P20P Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 13A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2740pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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