IXTQ220N055T
For Reference Only
| Part Number | IXTQ220N055T |
| PNEDA Part # | IXTQ220N055T |
| Description | MOSFET N-CH 55V 220A TO-3P |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 6,336 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IXTQ220N055T Resources
| Brand | IXYS |
| ECAD Module |
|
| Mfr. Part Number | IXTQ220N055T |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXTQ220N055T Datasheet
- where to find IXTQ220N055T
- IXYS
- IXYS IXTQ220N055T
- IXTQ220N055T PDF Datasheet
- IXTQ220N055T Stock
- IXTQ220N055T Pinout
- Datasheet IXTQ220N055T
- IXTQ220N055T Supplier
- IXYS Distributor
- IXTQ220N055T Price
- IXTQ220N055T Distributor
IXTQ220N055T Specifications
| Manufacturer | IXYS |
| Series | TrenchMV™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 158nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
| Package / Case | TO-3P-3, SC-65-3 |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series CoolSiC™ FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1.2kV Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V, 18V Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V Vgs(th) (Max) @ Id 5.7V @ 5.6mA Gate Charge (Qg) (Max) @ Vgs 31nC @ 18V Vgs (Max) +23V, -7V Input Capacitance (Ciss) (Max) @ Vds 1.06nF @ 800V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-4-1 Package / Case TO-247-4 |
Manufacturer Infineon Technologies Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5660pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 37mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 10V FET Feature - Power Dissipation (Max) 2.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MicroFet 1.6x1.6 Thin Package / Case 6-PowerUFDFN |
