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IXTQ182N055T

IXTQ182N055T

For Reference Only

Part Number IXTQ182N055T
PNEDA Part # IXTQ182N055T
Description MOSFET N-CH 55V 182A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,182
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ182N055T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ182N055T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ182N055T, IXTQ182N055T Datasheet (Total Pages: 6, Size: 211.42 KB)
PDFIXTQ182N055T Datasheet Cover
IXTQ182N055T Datasheet Page 2 IXTQ182N055T Datasheet Page 3 IXTQ182N055T Datasheet Page 4 IXTQ182N055T Datasheet Page 5 IXTQ182N055T Datasheet Page 6

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IXTQ182N055T Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C182A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs114nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4850pF @ 25V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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