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IXTP6N50D2

IXTP6N50D2

For Reference Only

Part Number IXTP6N50D2
PNEDA Part # IXTP6N50D2
Description MOSFET N-CH 500V 6A TO220AB
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,372
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP6N50D2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP6N50D2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP6N50D2, IXTP6N50D2 Datasheet (Total Pages: 5, Size: 186.2 KB)
PDFIXTH6N50D2 Datasheet Cover
IXTH6N50D2 Datasheet Page 2 IXTH6N50D2 Datasheet Page 3 IXTH6N50D2 Datasheet Page 4 IXTH6N50D2 Datasheet Page 5

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IXTP6N50D2 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs500mOhm @ 3A, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs96nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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