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IXTP2N100

IXTP2N100

For Reference Only

Part Number IXTP2N100
PNEDA Part # IXTP2N100
Description MOSFET N-CH 1000V 2A TO-220AB
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,942
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP2N100 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP2N100
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTP2N100 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds825pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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