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IXTP200N085T

IXTP200N085T

For Reference Only

Part Number IXTP200N085T
PNEDA Part # IXTP200N085T
Description MOSFET N-CH 85V 200A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP200N085T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP200N085T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP200N085T, IXTP200N085T Datasheet (Total Pages: 5, Size: 215.57 KB)
PDFIXTP200N085T Datasheet Cover
IXTP200N085T Datasheet Page 2 IXTP200N085T Datasheet Page 3 IXTP200N085T Datasheet Page 4 IXTP200N085T Datasheet Page 5

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IXTP200N085T Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)85V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs152nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7600pF @ 25V
FET Feature-
Power Dissipation (Max)480W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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