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IXTP18N60PM

IXTP18N60PM

For Reference Only

Part Number IXTP18N60PM
PNEDA Part # IXTP18N60PM
Description MOSFET N-CH TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,606
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP18N60PM Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP18N60PM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP18N60PM, IXTP18N60PM Datasheet (Total Pages: 4, Size: 115.7 KB)
PDFIXTP18N60PM Datasheet Cover
IXTP18N60PM Datasheet Page 2 IXTP18N60PM Datasheet Page 3 IXTP18N60PM Datasheet Page 4

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IXTP18N60PM Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs420mOhm @ 9A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 25V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Isolated Tab
Package / CaseTO-220-3 Full Pack, Isolated Tab

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