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IXTP110N12T2

IXTP110N12T2

For Reference Only

Part Number IXTP110N12T2
PNEDA Part # IXTP110N12T2
Description 120V/110A TRENCHT2 POWER MOSFET
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,524
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP110N12T2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP110N12T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP110N12T2, IXTP110N12T2 Datasheet (Total Pages: 6, Size: 205.26 KB)
PDFIXTA110N12T2 Datasheet Cover
IXTA110N12T2 Datasheet Page 2 IXTA110N12T2 Datasheet Page 3 IXTA110N12T2 Datasheet Page 4 IXTA110N12T2 Datasheet Page 5 IXTA110N12T2 Datasheet Page 6

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IXTP110N12T2 Specifications

ManufacturerIXYS
SeriesTrenchT2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14mOhm @ 55A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6570pF @ 25V
FET Feature-
Power Dissipation (Max)517W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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