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IXTN210P10T

IXTN210P10T

For Reference Only

Part Number IXTN210P10T
PNEDA Part # IXTN210P10T
Description MOSFET P-CH 100V 210A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,724
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTN210P10T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTN210P10T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTN210P10T, IXTN210P10T Datasheet (Total Pages: 6, Size: 181.71 KB)
PDFIXTN210P10T Datasheet Cover
IXTN210P10T Datasheet Page 2 IXTN210P10T Datasheet Page 3 IXTN210P10T Datasheet Page 4 IXTN210P10T Datasheet Page 5 IXTN210P10T Datasheet Page 6

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IXTN210P10T Specifications

ManufacturerIXYS
SeriesTrenchP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C210A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs740nC @ 10V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds69500pF @ 25V
FET Feature-
Power Dissipation (Max)830W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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