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IXTN200N10L2

IXTN200N10L2

For Reference Only

Part Number IXTN200N10L2
PNEDA Part # IXTN200N10L2
Description MOSFET N-CH 100V 178A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,620
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTN200N10L2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTN200N10L2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTN200N10L2, IXTN200N10L2 Datasheet (Total Pages: 5, Size: 170.37 KB)
PDFIXTN200N10L2 Datasheet Cover
IXTN200N10L2 Datasheet Page 2 IXTN200N10L2 Datasheet Page 3 IXTN200N10L2 Datasheet Page 4 IXTN200N10L2 Datasheet Page 5

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IXTN200N10L2 Specifications

ManufacturerIXYS
SeriesLinear L2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C178A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs540nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 25V
FET Feature-
Power Dissipation (Max)830W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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