IXTK120N20P
For Reference Only
Part Number | IXTK120N20P |
PNEDA Part # | IXTK120N20P |
Description | MOSFET N-CH 200V 120A TO-264 |
Manufacturer | IXYS |
Unit Price | Request a Quote |
In Stock | 3,726 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
IXTK120N20P Resources
Brand | IXYS |
ECAD Module | |
Mfr. Part Number | IXTK120N20P |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXTK120N20P Datasheet
- where to find IXTK120N20P
- IXYS
- IXYS IXTK120N20P
- IXTK120N20P PDF Datasheet
- IXTK120N20P Stock
- IXTK120N20P Pinout
- Datasheet IXTK120N20P
- IXTK120N20P Supplier
- IXYS Distributor
- IXTK120N20P Price
- IXTK120N20P Distributor
IXTK120N20P Specifications
Manufacturer | IXYS |
Series | PolarHT™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 22mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 152nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 714W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-264 (IXTK) |
Package / Case | TO-264-3, TO-264AA |
The Products You May Be Interested In
EPC Manufacturer EPC Series eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 160mOhm @ 500mA, 5V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.48nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 55pF @ 50V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |
STMicroelectronics Manufacturer STMicroelectronics Series STripFET™ H7 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 100mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 510pF @ 10V FET Feature - Power Dissipation (Max) 350mW (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package E-Line (TO-92 compatible) Package / Case E-Line-3 |
Cree/Wolfspeed Manufacturer Cree/Wolfspeed Series C3M™ FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 63A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V Rds On (Max) @ Id, Vgs 39mOhm @ 35A, 15V Vgs(th) (Max) @ Id 3.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs 87nC @ 15V Vgs (Max) +15V, -4V Input Capacitance (Ciss) (Max) @ Vds 1864pF @ 600V FET Feature - Power Dissipation (Max) 149W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-4 Package / Case TO-247-4 |