Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTH6N120

IXTH6N120

For Reference Only

Part Number IXTH6N120
PNEDA Part # IXTH6N120
Description MOSFET N-CH 1200V 6A TO-247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,574
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH6N120 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH6N120
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH6N120, IXTH6N120 Datasheet (Total Pages: 4, Size: 588.04 KB)
PDFIXTT6N120 Datasheet Cover
IXTT6N120 Datasheet Page 2 IXTT6N120 Datasheet Page 3 IXTT6N120 Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTH6N120 Datasheet
  • where to find IXTH6N120
  • IXYS

  • IXYS IXTH6N120
  • IXTH6N120 PDF Datasheet
  • IXTH6N120 Stock

  • IXTH6N120 Pinout
  • Datasheet IXTH6N120
  • IXTH6N120 Supplier

  • IXYS Distributor
  • IXTH6N120 Price
  • IXTH6N120 Distributor

IXTH6N120 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.6Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1950pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

The Products You May Be Interested In

FDG312P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

180mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 10V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-88 (SC-70-6)

Package / Case

6-TSSOP, SC-88, SOT-363

AON6452L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

SDMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.5A (Ta), 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Rds On (Max) @ Id, Vgs

25mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 50V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN-EP (5x6)

Package / Case

8-PowerVDFN

CSD18563Q5A

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.8mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 116W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSONP (5x6)

Package / Case

8-PowerTDFN

FCH35N60

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

98mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

181nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6640pF @ 25V

FET Feature

-

Power Dissipation (Max)

312.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

RSJ301N10FRATL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

30A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

46mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTS

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

D2-24044-MR

D2-24044-MR

Renesas Electronics America Inc.

IC DGTL AMP AUDIO PWR D 38HTSSOP

RT0603DRD07200RL

RT0603DRD07200RL

Yageo

RES SMD 200 OHM 0.5% 1/10W 0603

STPS2H100U

STPS2H100U

STMicroelectronics

DIODE SCHOTTKY 100V 2A SMB

NIS5135MN1TXG

NIS5135MN1TXG

ON Semiconductor

IC ELECTRONIC FUSE 10DFN

ALDP112W

ALDP112W

Panasonic Electric Works

RELAY GEN PURPOSE SPST 5A 12V

CDBHD1100L-G

CDBHD1100L-G

Comchip Technology

BRIDGE RECT 1P 100V 1A MINI-DIP

WSL1206R0500FEA

WSL1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/4W 1206

ST62T65CM6

ST62T65CM6

STMicroelectronics

IC MCU 8BIT 3.8KB OTP 28SOIC

T491B106K025AT

T491B106K025AT

KEMET

CAP TANT 10UF 10% 25V 1411

EDF1DS-E3/77

EDF1DS-E3/77

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 200V 1A DFS

NRVBS3200T3G

NRVBS3200T3G

ON Semiconductor

DIODE SCHOTTKY 200V 3A SMB

LTC3676HUJ-1#TRPBF

LTC3676HUJ-1#TRPBF

Linear Technology/Analog Devices

IC REG CONV I.MX6 7OUT 40QFN