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IXTH32P20T

IXTH32P20T

For Reference Only

Part Number IXTH32P20T
PNEDA Part # IXTH32P20T
Description MOSFET P-CH 200V 32A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH32P20T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH32P20T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH32P20T, IXTH32P20T Datasheet (Total Pages: 7, Size: 241.02 KB)
PDFIXTH32P20T Datasheet Cover
IXTH32P20T Datasheet Page 2 IXTH32P20T Datasheet Page 3 IXTH32P20T Datasheet Page 4 IXTH32P20T Datasheet Page 5 IXTH32P20T Datasheet Page 6 IXTH32P20T Datasheet Page 7

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IXTH32P20T Specifications

ManufacturerIXYS
SeriesTrenchP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs185nC @ 10V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds14500pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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