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IXTH32N65X

IXTH32N65X

For Reference Only

Part Number IXTH32N65X
PNEDA Part # IXTH32N65X
Description MOSFET N-CH 650V 32A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,346
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH32N65X Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH32N65X
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH32N65X, IXTH32N65X Datasheet (Total Pages: 6, Size: 212.16 KB)
PDFIXTH32N65X Datasheet Cover
IXTH32N65X Datasheet Page 2 IXTH32N65X Datasheet Page 3 IXTH32N65X Datasheet Page 4 IXTH32N65X Datasheet Page 5 IXTH32N65X Datasheet Page 6

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IXTH32N65X Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs135mOhm @ 16A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2205pF @ 25V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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