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IXTH12N100

IXTH12N100

For Reference Only

Part Number IXTH12N100
PNEDA Part # IXTH12N100
Description MOSFET N-CH 1000V 12A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,742
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH12N100 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH12N100
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH12N100, IXTH12N100 Datasheet (Total Pages: 4, Size: 614.36 KB)
PDFIXTM12N100 Datasheet Cover
IXTM12N100 Datasheet Page 2 IXTM12N100 Datasheet Page 3 IXTM12N100 Datasheet Page 4

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IXTH12N100 Specifications

ManufacturerIXYS
SeriesMegaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4000pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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