IXTF6N200P3
For Reference Only
| Part Number | IXTF6N200P3 |
| PNEDA Part # | IXTF6N200P3 |
| Description | MOSFET N-CH |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 7,470 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IXTF6N200P3 Resources
| Brand | IXYS |
| ECAD Module |
|
| Mfr. Part Number | IXTF6N200P3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXTF6N200P3 Datasheet
- where to find IXTF6N200P3
- IXYS
- IXYS IXTF6N200P3
- IXTF6N200P3 PDF Datasheet
- IXTF6N200P3 Stock
- IXTF6N200P3 Pinout
- Datasheet IXTF6N200P3
- IXTF6N200P3 Supplier
- IXYS Distributor
- IXTF6N200P3 Price
- IXTF6N200P3 Distributor
IXTF6N200P3 Specifications
| Manufacturer | IXYS |
| Series | Polar™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 2000V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 143nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Package / Case | ISOPLUSi5-Pak™ |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V, 20V Rds On (Max) @ Id, Vgs 10mOhm @ 11A, 20V Vgs(th) (Max) @ Id 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1543pF @ 25V FET Feature - Power Dissipation (Max) 2.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PQFN (3x3) Package / Case 8-PowerTDFN |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Cree/Wolfspeed Series C3M™ FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 15V Vgs(th) (Max) @ Id 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 17.3nC @ 15V Vgs (Max) +18V, -8V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 600V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK-7 Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Manufacturer IXYS Series HiPerFET™, TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 230A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V FET Feature - Power Dissipation (Max) 480W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
