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IXTA4N65X2

IXTA4N65X2

For Reference Only

Part Number IXTA4N65X2
PNEDA Part # IXTA4N65X2
Description MOSFET N-CH 650V 4A X2 TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,304
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA4N65X2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA4N65X2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA4N65X2, IXTA4N65X2 Datasheet (Total Pages: 2, Size: 3,874.78 KB)
PDFIXTY8N65X2 Datasheet Cover
IXTY8N65X2 Datasheet Page 2

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IXTA4N65X2 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.3nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds455pF @ 25V
FET Feature-
Power Dissipation (Max)80W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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