IXTA3N100D2HV

For Reference Only
Part Number | IXTA3N100D2HV |
PNEDA Part # | IXTA3N100D2HV |
Description | MOSFET N-CH |
Manufacturer | IXYS |
Unit Price | Request a Quote |
In Stock | 8,370 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXTA3N100D2HV Resources
Brand | IXYS |
ECAD Module |
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Mfr. Part Number | IXTA3N100D2HV |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IXTA3N100D2HV Specifications
Manufacturer | IXYS |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 0V |
Rds On (Max) @ Id, Vgs | 6Ohm @ 1.5A, 0V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 37.5nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 25V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263HV |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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