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IXTA1N120P

IXTA1N120P

For Reference Only

Part Number IXTA1N120P
PNEDA Part # IXTA1N120P
Description MOSFET N-CH 1200V 1A TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,042
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA1N120P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA1N120P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA1N120P, IXTA1N120P Datasheet (Total Pages: 4, Size: 139.12 KB)
PDFIXTA1N120P Datasheet Cover
IXTA1N120P Datasheet Page 2 IXTA1N120P Datasheet Page 3 IXTA1N120P Datasheet Page 4

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IXTA1N120P Specifications

ManufacturerIXYS
SeriesPolarVHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs17.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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