Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTA110N055T

IXTA110N055T

For Reference Only

Part Number IXTA110N055T
PNEDA Part # IXTA110N055T
Description MOSFET N-CH 55V 110A TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,204
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA110N055T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA110N055T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA110N055T, IXTA110N055T Datasheet (Total Pages: 5, Size: 216.38 KB)
PDFIXTA110N055T Datasheet Cover
IXTA110N055T Datasheet Page 2 IXTA110N055T Datasheet Page 3 IXTA110N055T Datasheet Page 4 IXTA110N055T Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTA110N055T Datasheet
  • where to find IXTA110N055T
  • IXYS

  • IXYS IXTA110N055T
  • IXTA110N055T PDF Datasheet
  • IXTA110N055T Stock

  • IXTA110N055T Pinout
  • Datasheet IXTA110N055T
  • IXTA110N055T Supplier

  • IXYS Distributor
  • IXTA110N055T Price
  • IXTA110N055T Distributor

IXTA110N055T Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3080pF @ 25V
FET Feature-
Power Dissipation (Max)230W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SSM6J771G,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 8.5V

Rds On (Max) @ Id, Vgs

31mOhm @ 3A, 8.5V

Vgs(th) (Max) @ Id

1.2V @ 1mA, 3V

Gate Charge (Qg) (Max) @ Vgs

9.8nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

-

Package / Case

6-UFBGA, WLCSP

SUG90090E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

ThunderFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

129nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5220pF @ 100V

FET Feature

-

Power Dissipation (Max)

395W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

RS1E321GNTB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

32A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

42.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2850pF @ 15V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSOP

Package / Case

8-PowerTDFN

IRF624SPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 2.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXTA4N80P

IXYS

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

14.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

ADM1031ARQZ

ADM1031ARQZ

ON Semiconductor

IC SENSOR 2-TEMP/FAN CTRL 16QSOP

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

PIC18F6410-I/PT

PIC18F6410-I/PT

Microchip Technology

IC MCU 8BIT 16KB FLASH 64TQFP

ADA4091-2ACPZ-RL

ADA4091-2ACPZ-RL

Analog Devices

IC OPAMP GP 2 CIRCUIT 8LFCSP

M48T59Y-70PC1

M48T59Y-70PC1

STMicroelectronics

IC RTC CLK/CALENDAR PAR 28DIP

NHD-0420CW-AW3

NHD-0420CW-AW3

Newhaven Display Intl

4X20 WHITE SLIM CHARACTER OLED

AD8062ARZ

AD8062ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

IM03GR

IM03GR

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 5VDC

TAJB106K016RNJ

TAJB106K016RNJ

CAP TANT 10UF 10% 16V 1411

CAT24M01WI-GT3

CAT24M01WI-GT3

ON Semiconductor

IC EEPROM 1M I2C 1MHZ 8SOIC

WSH28185L000FEA

WSH28185L000FEA

Vishay Dale

RES 0.005 OHM 1% 5W 2818

W25Q256JVCIQ

W25Q256JVCIQ

Winbond Electronics

IC FLASH 256M SPI 24TFBGA