Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTA10P50P-TRL

IXTA10P50P-TRL

For Reference Only

Part Number IXTA10P50P-TRL
PNEDA Part # IXTA10P50P-TRL
Description MOSFET P-CH 500V 10A TO-263AA
Manufacturer IXYS
Unit Price Request a Quote
In Stock 67,062
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 8 - Jun 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA10P50P-TRL Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA10P50P-TRL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA10P50P-TRL, IXTA10P50P-TRL Datasheet (Total Pages: 6, Size: 176.45 KB)
PDFIXTQ10P50P Datasheet Cover
IXTQ10P50P Datasheet Page 2 IXTQ10P50P Datasheet Page 3 IXTQ10P50P Datasheet Page 4 IXTQ10P50P Datasheet Page 5 IXTQ10P50P Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTA10P50P-TRL Datasheet
  • where to find IXTA10P50P-TRL
  • IXYS

  • IXYS IXTA10P50P-TRL
  • IXTA10P50P-TRL PDF Datasheet
  • IXTA10P50P-TRL Stock

  • IXTA10P50P-TRL Pinout
  • Datasheet IXTA10P50P-TRL
  • IXTA10P50P-TRL Supplier

  • IXYS Distributor
  • IXTA10P50P-TRL Price
  • IXTA10P50P-TRL Distributor

IXTA10P50P-TRL Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2840pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IXTH6N90

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.8Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

HUF75321D3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

36mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 25V

FET Feature

-

Power Dissipation (Max)

93W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

SI1400DL-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

150mOhm @ 1.7A, 4.5V

Vgs(th) (Max) @ Id

600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

568mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363

MCH6431-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

55mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

5.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-MCPH

Package / Case

6-SMD, Flat Leads

NP60N04VUK-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.85mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3680pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 105W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

SMBJ7.0CA-E3/52

SMBJ7.0CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 7V 12V DO214AA

TAJC337M006RNJ

TAJC337M006RNJ

CAP TANT 330UF 20% 6.3V 2312

1-1825027-7

1-1825027-7

TE Connectivity ALCOSWITCH Switches

SWITCH TACTILE SPST-NO 0.05A 24V

TPSD227K006R0100

TPSD227K006R0100

CAP TANT 220UF 10% 6.3V 2917

HV9910BLG-G

HV9910BLG-G

Microchip Technology

IC LED DRIVER CTRLR DIM 8SOIC

L7924CV

L7924CV

STMicroelectronics

IC REG LINEAR -24V 1.5A TO220AB

MAX13035EETE+T

MAX13035EETE+T

Maxim Integrated

IC TRNSLTR BIDIRECTIONAL 16TQFN

F951E106MAAAQ2

F951E106MAAAQ2

CAP TANT 10UF 20% 25V 1206

BZT52C3V9-7-F

BZT52C3V9-7-F

Diodes Incorporated

DIODE ZENER 3.9V 500MW SOD123

XC6204B252MR-G

XC6204B252MR-G

Torex Semiconductor Ltd

IC REG LINEAR 2.5V 150MA SOT25

74HC164D

74HC164D

Toshiba Semiconductor and Storage

IC SHIFT REGISTER 8BIT 14SOP

AT89C51-24AI

AT89C51-24AI

Microchip Technology

IC MCU 8BIT 4KB FLASH 44TQFP