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IXGX50N60BD1

IXGX50N60BD1

For Reference Only

Part Number IXGX50N60BD1
PNEDA Part # IXGX50N60BD1
Description IGBT 600V 75A 300W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,262
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGX50N60BD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGX50N60BD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGX50N60BD1, IXGX50N60BD1 Datasheet (Total Pages: 5, Size: 120.19 KB)
PDFIXGK50N60BD1 Datasheet Cover
IXGK50N60BD1 Datasheet Page 2 IXGK50N60BD1 Datasheet Page 3 IXGK50N60BD1 Datasheet Page 4 IXGK50N60BD1 Datasheet Page 5

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IXGX50N60BD1 Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 50A
Power - Max300W
Switching Energy1.5mJ (off)
Input TypeStandard
Gate Charge110nC
Td (on/off) @ 25°C50ns/200ns
Test Condition480V, 50A, 2.7Ohm, 15V
Reverse Recovery Time (trr)50ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePLUS247™-3

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Power - Max

100W

Switching Energy

230µJ (on), 1.18mJ (off)

Input Type

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51nC

Td (on/off) @ 25°C

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Test Condition

480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr)

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Mounting Type

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Package / Case

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Series

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IGBT Type

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Current - Collector (Ic) (Max)

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

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Power - Max

238W

Switching Energy

138µJ (on), 52µJ (off)

Input Type

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80nC

Td (on/off) @ 25°C

16.4ns/86.4ns

Test Condition

400V, 10A, 6Ohm, 15V

Reverse Recovery Time (trr)

31.8ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

APT45GP120B2DQ2G

Microsemi

Manufacturer

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Series

POWER MOS 7®

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

113A

Current - Collector Pulsed (Icm)

170A

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 45A

Power - Max

625W

Switching Energy

900µJ (on), 905µJ (off)

Input Type

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Gate Charge

185nC

Td (on/off) @ 25°C

18ns/100ns

Test Condition

600V, 45A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3 Variant

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