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IXGT32N90B2

IXGT32N90B2

For Reference Only

Part Number IXGT32N90B2
PNEDA Part # IXGT32N90B2
Description IGBT 900V 64A 300W TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,528
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGT32N90B2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGT32N90B2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGT32N90B2, IXGT32N90B2 Datasheet (Total Pages: 7, Size: 202.06 KB)
PDFIXGT32N90B2 Datasheet Cover
IXGT32N90B2 Datasheet Page 2 IXGT32N90B2 Datasheet Page 3 IXGT32N90B2 Datasheet Page 4 IXGT32N90B2 Datasheet Page 5 IXGT32N90B2 Datasheet Page 6 IXGT32N90B2 Datasheet Page 7

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IXGT32N90B2 Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)900V
Current - Collector (Ic) (Max)64A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 32A
Power - Max300W
Switching Energy2.6mJ (off)
Input TypeStandard
Gate Charge89nC
Td (on/off) @ 25°C20ns/260ns
Test Condition720V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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428W

Switching Energy

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Td (on/off) @ 25°C

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Test Condition

400V, 75A, 5Ohm, 15V

Reverse Recovery Time (trr)

121ns

Operating Temperature

-40°C ~ 175°C (TJ)

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Through Hole

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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