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IXGT30N120BD1

IXGT30N120BD1

For Reference Only

Part Number IXGT30N120BD1
PNEDA Part # IXGT30N120BD1
Description IGBT 1200V TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,114
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGT30N120BD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGT30N120BD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGT30N120BD1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6.5A

Power - Max

60W

Switching Energy

160µJ (on), 130µJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

480V, 6.5A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Package / Case

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

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Power - Max

100W

Switching Energy

430µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

30ns/180ns

Test Condition

480V, 10A, 30Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

250A

Vce(on) (Max) @ Vge, Ic

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Power - Max

600W

Switching Energy

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Input Type

Standard

Gate Charge

80nC

Td (on/off) @ 25°C

22ns/80ns

Test Condition

400V, 36A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.4V @ 15V, 30A

Power - Max

220W

Switching Energy

740µJ (on), 3mJ (off)

Input Type

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Gate Charge

80nC

Td (on/off) @ 25°C

18ns/330ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

3ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

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Infineon Technologies

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Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

Power - Max

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Switching Energy

110µJ (on), 135µJ (off)

Input Type

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Gate Charge

18.2nC

Td (on/off) @ 25°C

25ns/215ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

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