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IXGT24N60C

IXGT24N60C

For Reference Only

Part Number IXGT24N60C
PNEDA Part # IXGT24N60C
Description IGBT 600V 48A 150W TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,870
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGT24N60C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGT24N60C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGT24N60C, IXGT24N60C Datasheet (Total Pages: 2, Size: 53.67 KB)
PDFIXGH24N60C Datasheet Cover
IXGH24N60C Datasheet Page 2

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IXGT24N60C Specifications

ManufacturerIXYS
SeriesHiPerFAST™, Lightspeed™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)48A
Current - Collector Pulsed (Icm)96A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 24A
Power - Max150W
Switching Energy240µJ (off)
Input TypeStandard
Gate Charge55nC
Td (on/off) @ 25°C15ns/75ns
Test Condition480V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Infineon Technologies

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

74A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

255W

Switching Energy

360µJ (on), 100µJ (off)

Input Type

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Gate Charge

95nC

Td (on/off) @ 25°C

19ns/160ns

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400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

-40°C ~ 150°C (TJ)

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

532µJ (on), 311µJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

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Supplier Device Package

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Microsemi

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

183A

Current - Collector Pulsed (Icm)

307A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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