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IXGT10N170

IXGT10N170

For Reference Only

Part Number IXGT10N170
PNEDA Part # IXGT10N170
Description IGBT 1700V 20A 110W TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,662
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGT10N170 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGT10N170
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGT10N170, IXGT10N170 Datasheet (Total Pages: 5, Size: 189.44 KB)
PDFIXGT10N170 Datasheet Cover
IXGT10N170 Datasheet Page 2 IXGT10N170 Datasheet Page 3 IXGT10N170 Datasheet Page 4 IXGT10N170 Datasheet Page 5

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IXGT10N170 Specifications

ManufacturerIXYS
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)70A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 10A
Power - Max110W
Switching Energy-
Input TypeStandard
Gate Charge32nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

400A

Vce(on) (Max) @ Vge, Ic

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Power - Max

577W

Switching Energy

11.7mJ (on), 6.9mJ (off)

Input Type

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Gate Charge

270nC

Td (on/off) @ 25°C

21ns/200ns

Test Condition

1250V, 40A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

27A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

3.15V @ 15V, 15A

Power - Max

138W

Switching Energy

530µJ

Input Type

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Gate Charge

80nC

Td (on/off) @ 25°C

13ns/209ns

Test Condition

400V, 15A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

120A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

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Power - Max

360W

Switching Energy

750µJ (on), 1.05mJ (off)

Input Type

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Gate Charge

217nC

Td (on/off) @ 25°C

65ns/180ns

Test Condition

400V, 60A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 36A

Power - Max

600W

Switching Energy

720µJ (on), 330µJ (off)

Input Type

Standard

Gate Charge

64nC

Td (on/off) @ 25°C

24ns/62ns

Test Condition

360V, 36A, 5Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXXH)

HGTG5N120BND

ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 5A

Power - Max

167W

Switching Energy

450µJ (on), 390µJ (off)

Input Type

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Gate Charge

53nC

Td (on/off) @ 25°C

22ns/160ns

Test Condition

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Reverse Recovery Time (trr)

65ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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