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IXGR35N120C

IXGR35N120C

For Reference Only

Part Number IXGR35N120C
PNEDA Part # IXGR35N120C
Description IGBT 1200V 70A 200W ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,964
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGR35N120C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGR35N120C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGR35N120C, IXGR35N120C Datasheet (Total Pages: 2, Size: 49.14 KB)
PDFIXGR35N120C Datasheet Cover
IXGR35N120C Datasheet Page 2

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IXGR35N120C Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)70A
Current - Collector Pulsed (Icm)140A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 35A
Power - Max200W
Switching Energy3mJ (off)
Input TypeStandard
Gate Charge170nC
Td (on/off) @ 25°C50ns/150ns
Test Condition960V, 35A, 4.7Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseISOPLUS247™
Supplier Device PackageISOPLUS247™

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Test Condition

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Reverse Recovery Time (trr)

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Mounting Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 24A, 5Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

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Supplier Device Package

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.55mJ (on), 1.7mJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

600V, 15A, 56Ohm, 15V

Reverse Recovery Time (trr)

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