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IXGQ96N30TCD1

IXGQ96N30TCD1

For Reference Only

Part Number IXGQ96N30TCD1
PNEDA Part # IXGQ96N30TCD1
Description IGBT 320V 96A TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGQ96N30TCD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGQ96N30TCD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGQ96N30TCD1 Specifications

ManufacturerIXYS
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)320V
Current - Collector (Ic) (Max)96A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

170A

Current - Collector Pulsed (Icm)

340A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 70A

Power - Max

695W

Switching Energy

2mJ (on), 950µJ (off)

Input Type

Standard

Gate Charge

150nC

Td (on/off) @ 25°C

30ns/90ns

Test Condition

360V, 70A, 2Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

-

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 50A

Power - Max

652W

Switching Energy

3mJ (on), 1.9mJ (off)

Input Type

Standard

Gate Charge

235nC

Td (on/off) @ 25°C

34ns/297ns

Test Condition

600V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3-46

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Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 40A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

74nC

Td (on/off) @ 25°C

53ns/90ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3PFM, SC-93-3

Supplier Device Package

TO-3PFM

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ON Semiconductor

Manufacturer

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Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

24A

Current - Collector Pulsed (Icm)

96A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 12A

Power - Max

104W

Switching Energy

380µJ (on), 900µJ (off)

Input Type

Standard

Gate Charge

48nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

STGWA40H120F2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 40A

Power - Max

468W

Switching Energy

1mJ (on), 1.32mJ (off)

Input Type

Standard

Gate Charge

158nC

Td (on/off) @ 25°C

18ns/152ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 Long Leads

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