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IXGQ96N30TBD1

IXGQ96N30TBD1

For Reference Only

Part Number IXGQ96N30TBD1
PNEDA Part # IXGQ96N30TBD1
Description IGBT 320V 96A TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,148
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGQ96N30TBD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGQ96N30TBD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGQ96N30TBD1 Specifications

ManufacturerIXYS
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)320V
Current - Collector (Ic) (Max)96A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

The Products You May Be Interested In

Manufacturer

IXYS

Series

-

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

56A

Current - Collector Pulsed (Icm)

156A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 24A

Power - Max

190W

Switching Energy

440µJ (on), 700µJ (off)

Input Type

Standard

Gate Charge

77nC

Td (on/off) @ 25°C

21ns/200ns

Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

30ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

IRG4BC30F-STRLP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

31A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Power - Max

100W

Switching Energy

230µJ (on), 1.18mJ (off)

Input Type

Standard

Gate Charge

51nC

Td (on/off) @ 25°C

21ns/200ns

Test Condition

480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

170A

Current - Collector Pulsed (Icm)

360A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 60A

Power - Max

750W

Switching Energy

2.8mJ (on), 1mJ (off)

Input Type

Standard

Gate Charge

123nC

Td (on/off) @ 25°C

27ns/93ns

Test Condition

400V, 60A, 3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

IRG7PH35UD1MPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Power - Max

179W

Switching Energy

620µJ (off)

Input Type

Standard

Gate Charge

130nC

Td (on/off) @ 25°C

-/160ns

Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

STGF3NB60FD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

6A

Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 3A

Power - Max

25W

Switching Energy

125µJ (off)

Input Type

Standard

Gate Charge

16nC

Td (on/off) @ 25°C

12.5ns/105ns

Test Condition

480V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

45ns

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220FP

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