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IXGP16N60B2

IXGP16N60B2

For Reference Only

Part Number IXGP16N60B2
PNEDA Part # IXGP16N60B2
Description IGBT 600V 40A 150W TO220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,132
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGP16N60B2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGP16N60B2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGP16N60B2, IXGP16N60B2 Datasheet (Total Pages: 6, Size: 220.16 KB)
PDFIXGP16N60B2 Datasheet Cover
IXGP16N60B2 Datasheet Page 2 IXGP16N60B2 Datasheet Page 3 IXGP16N60B2 Datasheet Page 4 IXGP16N60B2 Datasheet Page 5 IXGP16N60B2 Datasheet Page 6

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IXGP16N60B2 Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 12A
Power - Max150W
Switching Energy160µJ (on), 120µJ (off)
Input TypeStandard
Gate Charge24nC
Td (on/off) @ 25°C18ns/73ns
Test Condition400V, 12A, 22Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 20A

Power - Max

220W

Switching Energy

270µJ (on), 90µJ (off)

Input Type

Standard

Gate Charge

38nC

Td (on/off) @ 25°C

16ns/42ns

Test Condition

300V, 20A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

1200A

Vce(on) (Max) @ Vge, Ic

1.15V @ 15V, 100A

Power - Max

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Switching Energy

-

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Gate Charge

560nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

400V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

7V @ 2.5V, 100A

Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 110µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

IRG7CH42UEF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.4V @ 15V, 5A

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

157nC

Td (on/off) @ 25°C

25ns/229ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

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