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IXGP16N60B2

IXGP16N60B2

For Reference Only

Part Number IXGP16N60B2
PNEDA Part # IXGP16N60B2
Description IGBT 600V 40A 150W TO220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,132
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGP16N60B2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGP16N60B2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGP16N60B2, IXGP16N60B2 Datasheet (Total Pages: 6, Size: 220.16 KB)
PDFIXGP16N60B2 Datasheet Cover
IXGP16N60B2 Datasheet Page 2 IXGP16N60B2 Datasheet Page 3 IXGP16N60B2 Datasheet Page 4 IXGP16N60B2 Datasheet Page 5 IXGP16N60B2 Datasheet Page 6

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IXGP16N60B2 Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 12A
Power - Max150W
Switching Energy160µJ (on), 120µJ (off)
Input TypeStandard
Gate Charge24nC
Td (on/off) @ 25°C18ns/73ns
Test Condition400V, 12A, 22Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Td (on/off) @ 25°C

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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157nC

Td (on/off) @ 25°C

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Test Condition

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

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Mounting Type

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Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

I2PAK (TO-262)

IRG4PSC71KPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

350W

Switching Energy

790µJ (on), 1.98mJ (off)

Input Type

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Gate Charge

340nC

Td (on/off) @ 25°C

34ns/54ns

Test Condition

480V, 60A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-274AA

Supplier Device Package

SUPER-247™ (TO-274AA)

FGB30N6S2T

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 110µJ (off)

Input Type

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Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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