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IXGH85N30C3

IXGH85N30C3

For Reference Only

Part Number IXGH85N30C3
PNEDA Part # IXGH85N30C3
Description IGBT 300V 75A 333W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,778
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH85N30C3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH85N30C3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH85N30C3, IXGH85N30C3 Datasheet (Total Pages: 6, Size: 106.22 KB)
PDFIXGH85N30C3 Datasheet Cover
IXGH85N30C3 Datasheet Page 2 IXGH85N30C3 Datasheet Page 3 IXGH85N30C3 Datasheet Page 4 IXGH85N30C3 Datasheet Page 5 IXGH85N30C3 Datasheet Page 6

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IXGH85N30C3 Specifications

ManufacturerIXYS
SeriesGenX3™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)300V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)420A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 85A
Power - Max333W
Switching Energy200µJ (on), 390µJ (off)
Input TypeStandard
Gate Charge136nC
Td (on/off) @ 25°C25ns/100ns
Test Condition200V, 42.5A, 3.3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Power - Max

480W

Switching Energy

480µJ (off)

Input Type

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Gate Charge

146nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

130µJ (on), 83µJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

400V, 4A, 100Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

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-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

11A

Current - Collector Pulsed (Icm)

22A

Vce(on) (Max) @ Vge, Ic

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Power - Max

63W

Switching Energy

73µJ (on), 47µJ (off)

Input Type

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Gate Charge

12nC

Td (on/off) @ 25°C

22ns/100ns

Test Condition

400V, 4A, 100Ohm, 15V

Reverse Recovery Time (trr)

93ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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ON Semiconductor

Manufacturer

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Series

Automotive, AEC-Q101

IGBT Type

Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 20A

Power - Max

165W

Switching Energy

430µJ (on), 130µJ (off)

Input Type

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Gate Charge

66nC

Td (on/off) @ 25°C

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Test Condition

400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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