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IXGH85N30C3

IXGH85N30C3

For Reference Only

Part Number IXGH85N30C3
PNEDA Part # IXGH85N30C3
Description IGBT 300V 75A 333W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,778
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH85N30C3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH85N30C3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH85N30C3, IXGH85N30C3 Datasheet (Total Pages: 6, Size: 106.22 KB)
PDFIXGH85N30C3 Datasheet Cover
IXGH85N30C3 Datasheet Page 2 IXGH85N30C3 Datasheet Page 3 IXGH85N30C3 Datasheet Page 4 IXGH85N30C3 Datasheet Page 5 IXGH85N30C3 Datasheet Page 6

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IXGH85N30C3 Specifications

ManufacturerIXYS
SeriesGenX3™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)300V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)420A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 85A
Power - Max333W
Switching Energy200µJ (on), 390µJ (off)
Input TypeStandard
Gate Charge136nC
Td (on/off) @ 25°C25ns/100ns
Test Condition200V, 42.5A, 3.3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Test Condition

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Series

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Operating Temperature

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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