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IXGH56N60B3D1

IXGH56N60B3D1

For Reference Only

Part Number IXGH56N60B3D1
PNEDA Part # IXGH56N60B3D1
Description IGBT 600V 330W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,904
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH56N60B3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH56N60B3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH56N60B3D1, IXGH56N60B3D1 Datasheet (Total Pages: 7, Size: 230.02 KB)
PDFIXGH56N60B3D1 Datasheet Cover
IXGH56N60B3D1 Datasheet Page 2 IXGH56N60B3D1 Datasheet Page 3 IXGH56N60B3D1 Datasheet Page 4 IXGH56N60B3D1 Datasheet Page 5 IXGH56N60B3D1 Datasheet Page 6 IXGH56N60B3D1 Datasheet Page 7

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IXGH56N60B3D1 Specifications

ManufacturerIXYS
SeriesGenX3™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)350A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 44A
Power - Max330W
Switching Energy1.3mJ (on), 1.05mJ (off)
Input TypeStandard
Gate Charge138nC
Td (on/off) @ 25°C26ns/155ns
Test Condition480V, 44A, 5Ohm, 15V
Reverse Recovery Time (trr)100ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

5V @ 15V, 11A

Power - Max

190W

Switching Energy

900µJ (off)

Input Type

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Gate Charge

65nC

Td (on/off) @ 25°C

36ns/160ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Td (on/off) @ 25°C

50ns/200ns

Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

78ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

IXYS

Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

75A

Vce(on) (Max) @ Vge, Ic

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Power - Max

250W

Switching Energy

2.97mJ (on), 790µJ (off)

Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

21ns/336ns

Test Condition

850V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

200ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

IRGC14C40LD

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

430V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.65V @ 4.5V, 10A

Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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