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IXGH48N60C3

IXGH48N60C3

For Reference Only

Part Number IXGH48N60C3
PNEDA Part # IXGH48N60C3
Description IGBT 600V 75A 300W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,226
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH48N60C3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH48N60C3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGH48N60C3 Specifications

ManufacturerIXYS
SeriesGenX3™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)250A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Power - Max300W
Switching Energy410µJ (on), 230µJ (off)
Input TypeStandard
Gate Charge77nC
Td (on/off) @ 25°C19ns/60ns
Test Condition400V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Series

GenX3™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

46A

Current - Collector Pulsed (Icm)

110A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 24A

Power - Max

240W

Switching Energy

1.35mJ (on), 400µJ (off)

Input Type

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Gate Charge

40nC

Td (on/off) @ 25°C

20ns/73ns

Test Condition

450V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

400V

Current - Collector (Ic) (Max)

26.9A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.2V @ 4V, 6A

Power - Max

166W

Switching Energy

-

Input Type

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Gate Charge

24nC

Td (on/off) @ 25°C

1µs/5.3µs

Test Condition

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Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

430V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.75V @ 5V, 14A

Power - Max

125W

Switching Energy

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Input Type

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Gate Charge

27nC

Td (on/off) @ 25°C

900ns/6µs

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

RGTV00TS65DGC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

95A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 50A

Power - Max

276W

Switching Energy

1.17mJ (on), 940µJ (off)

Input Type

Standard

Gate Charge

104nC

Td (on/off) @ 25°C

41ns/142ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

102ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247N

HGTG10N120BND

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

35A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 10A

Power - Max

298W

Switching Energy

850µJ (on), 800µJ (off)

Input Type

Standard

Gate Charge

100nC

Td (on/off) @ 25°C

23ns/165ns

Test Condition

960V, 10A, 10Ohm, 15V

Reverse Recovery Time (trr)

70ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

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