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IXGH25N120

IXGH25N120

For Reference Only

Part Number IXGH25N120
PNEDA Part # IXGH25N120
Description IGBT 1200V 50A 200W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,238
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH25N120 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH25N120
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH25N120, IXGH25N120 Datasheet (Total Pages: 2, Size: 45.89 KB)
PDFIXGH25N120 Datasheet Cover
IXGH25N120 Datasheet Page 2

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IXGH25N120 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 25A
Power - Max200W
Switching Energy11mJ (off)
Input TypeStandard
Gate Charge130nC
Td (on/off) @ 25°C100ns/650ns
Test Condition960V, 25A, 33Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 35A

Power - Max

350W

Switching Energy

3mJ (off)

Input Type

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Gate Charge

170nC

Td (on/off) @ 25°C

50ns/150ns

Test Condition

960V, 35A, 5Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

Manufacturer

IXYS

Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 12A

Power - Max

63W

Switching Energy

60µJ (off)

Input Type

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Gate Charge

32nC

Td (on/off) @ 25°C

25ns/60ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUS220™

Supplier Device Package

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HGTG40N60A4

ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 40A

Power - Max

625W

Switching Energy

400µJ (on), 370µJ (off)

Input Type

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Gate Charge

350nC

Td (on/off) @ 25°C

25ns/145ns

Test Condition

390V, 40A, 2.2Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

RJH65T47DPQ-A0#T0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 45A

Power - Max

375W

Switching Energy

520µJ (on), 560µJ (off)

Input Type

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Gate Charge

127nC

Td (on/off) @ 25°C

45ns/190ns

Test Condition

400V, 45A, 10Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247A

RGT8NS65DGTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

8A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 4A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

13.5nC

Td (on/off) @ 25°C

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Test Condition

400V, 4A, 50Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

LPDS (TO-263S)

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