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IXGH15N120B2D1

IXGH15N120B2D1

For Reference Only

Part Number IXGH15N120B2D1
PNEDA Part # IXGH15N120B2D1
Description IGBT 1200V 30A 192W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,642
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH15N120B2D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH15N120B2D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH15N120B2D1, IXGH15N120B2D1 Datasheet (Total Pages: 2, Size: 70.66 KB)
PDFIXGH15N120B2D1 Datasheet Cover
IXGH15N120B2D1 Datasheet Page 2

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IXGH15N120B2D1 Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 15A
Power - Max192W
Switching Energy1.4mJ (off)
Input TypeStandard
Gate Charge86nC
Td (on/off) @ 25°C25ns/165ns
Test Condition960V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)165ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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-55°C ~ 150°C (TJ)

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ON Semiconductor

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 25A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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