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IXFX32N90P

IXFX32N90P

For Reference Only

Part Number IXFX32N90P
PNEDA Part # IXFX32N90P
Description MOSFET N-CH 900V 32A PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,502
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFX32N90P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFX32N90P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFX32N90P, IXFX32N90P Datasheet (Total Pages: 5, Size: 126.42 KB)
PDFIXFK32N90P Datasheet Cover
IXFK32N90P Datasheet Page 2 IXFK32N90P Datasheet Page 3 IXFK32N90P Datasheet Page 4 IXFK32N90P Datasheet Page 5

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IXFX32N90P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 16A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs215nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds10600pF @ 25V
FET Feature-
Power Dissipation (Max)960W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

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