Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFX120N30T

IXFX120N30T

For Reference Only

Part Number IXFX120N30T
PNEDA Part # IXFX120N30T
Description MOSFET N-CH 300V 120A PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,290
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFX120N30T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFX120N30T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFX120N30T, IXFX120N30T Datasheet (Total Pages: 5, Size: 139.2 KB)
PDFIXFK120N30T Datasheet Cover
IXFK120N30T Datasheet Page 2 IXFK120N30T Datasheet Page 3 IXFK120N30T Datasheet Page 4 IXFK120N30T Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFX120N30T Datasheet
  • where to find IXFX120N30T
  • IXYS

  • IXYS IXFX120N30T
  • IXFX120N30T PDF Datasheet
  • IXFX120N30T Stock

  • IXFX120N30T Pinout
  • Datasheet IXFX120N30T
  • IXFX120N30T Supplier

  • IXYS Distributor
  • IXFX120N30T Price
  • IXFX120N30T Distributor

IXFX120N30T Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs24mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs265nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds20000pF @ 25V
FET Feature-
Power Dissipation (Max)960W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

The Products You May Be Interested In

IXTP50N25T

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

50mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

-

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

RS1L145GNTB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

14.5A (Ta), 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.7mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

2.7V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1880pF @ 30V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSOP

Package / Case

8-PowerTDFN

AUIRL1404S

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.3V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 95A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6600pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252AA)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

RQ1E070RPTR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 10V

FET Feature

-

Power Dissipation (Max)

550mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT8

Package / Case

8-SMD, Flat Lead

NVMJS1D3N04CTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

41A (Ta), 235A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.5V @ 170µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 128W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-LFPAK

Package / Case

8-PowerSMD, Gull Wing

Recently Sold

S25FL256SAGBHIA00

S25FL256SAGBHIA00

Cypress Semiconductor

IC FLASH 256M SPI 133MHZ 24BGA

AD5421BREZ

AD5421BREZ

Analog Devices

IC DAC 16BIT V-OUT 28TSSOP

HMC7044LP10BE

HMC7044LP10BE

Analog Devices

IC JITTER ATTENUATOR 68LFCSP

DFLS1200-7

DFLS1200-7

Diodes Incorporated

DIODE SCHOTTKY 200V POWERDI123

1N4007G

1N4007G

ON Semiconductor

DIODE GEN PURP 1KV 1A DO41

AD780ARZ-REEL7

AD780ARZ-REEL7

Analog Devices

IC VREF SERIES/SHUNT PROG 8SOIC

ASVTX-12-A-38.400MHZ-I15-T

ASVTX-12-A-38.400MHZ-I15-T

Abracon

XTAL OSC VCTCXO 38.4000MHZ SNWV

B39162B4300F210

B39162B4300F210

Qualcomm

FILTER SAW 1.575GHZ 5SMD

MMBF170

MMBF170

ON Semiconductor

MOSFET N-CH 60V 500MA SOT-23

ATMEGA1280-16AU

ATMEGA1280-16AU

Microchip Technology

IC MCU 8BIT 128KB FLASH 100TQFP

F951E106MAAAQ2

F951E106MAAAQ2

CAP TANT 10UF 20% 25V 1206

AT45DB041B-SI

AT45DB041B-SI

Microchip Technology

IC FLASH 4M SPI 20MHZ 8SOIC