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IXFT74N20Q

IXFT74N20Q

For Reference Only

Part Number IXFT74N20Q
PNEDA Part # IXFT74N20Q
Description MOSFET N-CH TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 22 - Apr 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFT74N20Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFT74N20Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFT74N20Q, IXFT74N20Q Datasheet (Total Pages: 2, Size: 133.86 KB)
PDFIXFT74N20Q Datasheet Cover
IXFT74N20Q Datasheet Page 2

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IXFT74N20Q Specifications

ManufacturerIXYS
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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Series

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Technology

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

145nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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Operating Temperature

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Supplier Device Package

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Package / Case

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ON Semiconductor

Manufacturer

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Series

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FET Type

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Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

53mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 15V

FET Feature

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Power Dissipation (Max)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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Package / Case

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Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

56mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.4nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 10V

FET Feature

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Power Dissipation (Max)

430mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Package / Case

SC-70, SOT-323

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Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

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FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

190mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

155pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Package / Case

TO-236-3, SC-59, SOT-23-3

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

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Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1425pF @ 25V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

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