Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFT70N15

IXFT70N15

For Reference Only

Part Number IXFT70N15
PNEDA Part # IXFT70N15
Description MOSFET N-CH 150V 70A TO-268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,994
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFT70N15 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFT70N15
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFT70N15, IXFT70N15 Datasheet (Total Pages: 2, Size: 108.2 KB)
PDFIXFH70N15 Datasheet Cover
IXFH70N15 Datasheet Page 2

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFT70N15 Datasheet
  • where to find IXFT70N15
  • IXYS

  • IXYS IXFT70N15
  • IXFT70N15 PDF Datasheet
  • IXFT70N15 Stock

  • IXFT70N15 Pinout
  • Datasheet IXFT70N15
  • IXFT70N15 Supplier

  • IXYS Distributor
  • IXFT70N15 Price
  • IXFT70N15 Distributor

IXFT70N15 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs28mOhm @ 35A, 10V
Vgs(th) (Max) @ Id4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

The Products You May Be Interested In

BSS192PL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

190mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Rds On (Max) @ Id, Vgs

12Ohm @ 190mA, 10V

Vgs(th) (Max) @ Id

2V @ 130µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

104pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT89

Package / Case

TO-243AA

APTM100DAM90G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

78A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

105mOhm @ 39A, 10V

Vgs(th) (Max) @ Id

5V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

744nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

20700pF @ 25V

FET Feature

-

Power Dissipation (Max)

1250W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP6

Package / Case

SP6

TN0604N3-G-P013

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

700mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

750mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

1.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

190pF @ 20V

FET Feature

-

Power Dissipation (Max)

740mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

2SK3670(T6CANO,F,M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-92MOD

Package / Case

TO-226-3, TO-92-3 Long Body

IXTP62N15P

IXYS

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 31A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2250pF @ 25V

FET Feature

-

Power Dissipation (Max)

350W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

MT29F16G08ABACAWP-ITZ:C

MT29F16G08ABACAWP-ITZ:C

Micron Technology Inc.

IC FLASH 16G PARALLEL 48TSOP

TAJD336K035RNJ

TAJD336K035RNJ

CAP TANT 33UF 10% 35V 2917

FA-20H 12.0000MD30Z-K3

FA-20H 12.0000MD30Z-K3

EPSON

CRYSTAL 12.00 MHZ 10.0PF SMD

HCPL-0601

HCPL-0601

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO

CY90F543GPF-GE1

CY90F543GPF-GE1

Cypress Semiconductor

IC MCU 16BIT 128KB FLASH 100QFP

NRVBS3100T3G

NRVBS3100T3G

ON Semiconductor

DIODE SCHOTTKY 100V 3A SMC

BAT54WS-7-F

BAT54WS-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 100MA SOD323

XC6SLX100-3CSG484I

XC6SLX100-3CSG484I

Xilinx

IC FPGA 338 I/O 484CSBGA

ADM3202ARN

ADM3202ARN

Analog Devices

IC TRANSCEIVER FULL 2/2 16SOIC

CP2105-F01-GM

CP2105-F01-GM

Silicon Labs

IC SGL USB-DL UART BRIDGE 24QFN

W25Q80DVSVIG

W25Q80DVSVIG

Winbond Electronics

IC FLASH 8M SPI 104MHZ 8VSOP

SMAJ33CA

SMAJ33CA

Bourns

TVS DIODE 33V 53.3V SMA