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IXFR4N100Q

IXFR4N100Q

For Reference Only

Part Number IXFR4N100Q
PNEDA Part # IXFR4N100Q
Description MOSFET N-CH 1KV 3.5A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,894
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFR4N100Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR4N100Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR4N100Q, IXFR4N100Q Datasheet (Total Pages: 2, Size: 79.91 KB)
PDFIXFR4N100Q Datasheet Cover
IXFR4N100Q Datasheet Page 2

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IXFR4N100Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1050pF @ 25V
FET Feature-
Power Dissipation (Max)80W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

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