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IXFR32N80P

IXFR32N80P

For Reference Only

Part Number IXFR32N80P
PNEDA Part # IXFR32N80P
Description MOSFET N-CH 800V 20A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,398
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFR32N80P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR32N80P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR32N80P, IXFR32N80P Datasheet (Total Pages: 5, Size: 149.99 KB)
PDFIXFR32N80P Datasheet Cover
IXFR32N80P Datasheet Page 2 IXFR32N80P Datasheet Page 3 IXFR32N80P Datasheet Page 4 IXFR32N80P Datasheet Page 5

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IXFR32N80P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs290mOhm @ 16A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds8800pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

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