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IXFR200N10P

IXFR200N10P

For Reference Only

Part Number IXFR200N10P
PNEDA Part # IXFR200N10P
Description MOSFET N-CH 100V 133A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,588
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFR200N10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR200N10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR200N10P, IXFR200N10P Datasheet (Total Pages: 5, Size: 122.96 KB)
PDFIXFR200N10P Datasheet Cover
IXFR200N10P Datasheet Page 2 IXFR200N10P Datasheet Page 3 IXFR200N10P Datasheet Page 4 IXFR200N10P Datasheet Page 5

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IXFR200N10P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C133A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs235nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7600pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

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