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IXFQ60N60X

IXFQ60N60X

For Reference Only

Part Number IXFQ60N60X
PNEDA Part # IXFQ60N60X
Description MOSFET N-CH 600V 60A TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,256
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFQ60N60X Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFQ60N60X
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFQ60N60X, IXFQ60N60X Datasheet (Total Pages: 5, Size: 166.25 KB)
PDFIXFQ60N60X Datasheet Cover
IXFQ60N60X Datasheet Page 2 IXFQ60N60X Datasheet Page 3 IXFQ60N60X Datasheet Page 4 IXFQ60N60X Datasheet Page 5

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IXFQ60N60X Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs55mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs143nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5800pF @ 25V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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