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IXFQ60N50P3

IXFQ60N50P3

For Reference Only

Part Number IXFQ60N50P3
PNEDA Part # IXFQ60N50P3
Description MOSFET N-CH 500V 60A TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,652
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFQ60N50P3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFQ60N50P3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFQ60N50P3, IXFQ60N50P3 Datasheet (Total Pages: 5, Size: 176.29 KB)
PDFIXFT60N50P3 Datasheet Cover
IXFT60N50P3 Datasheet Page 2 IXFT60N50P3 Datasheet Page 3 IXFT60N50P3 Datasheet Page 4 IXFT60N50P3 Datasheet Page 5

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IXFQ60N50P3 Specifications

ManufacturerIXYS
SeriesHiPerFET™, Polar3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs96nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6250pF @ 25V
FET Feature-
Power Dissipation (Max)1040W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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