Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFP7N100P

IXFP7N100P

For Reference Only

Part Number IXFP7N100P
PNEDA Part # IXFP7N100P
Description MOSFET N-CH 1000V 7A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,850
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFP7N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFP7N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFP7N100P Datasheet
  • where to find IXFP7N100P
  • IXYS

  • IXYS IXFP7N100P
  • IXFP7N100P PDF Datasheet
  • IXFP7N100P Stock

  • IXFP7N100P Pinout
  • Datasheet IXFP7N100P
  • IXFP7N100P Supplier

  • IXYS Distributor
  • IXFP7N100P Price
  • IXFP7N100P Distributor

IXFP7N100P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2590pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

STW20NM60

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

FET Feature

-

Power Dissipation (Max)

192W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

TPCA8065-H,LQ(S

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.4mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.3V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 25W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

IPD50R950CEBTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

950mOhm @ 1.2A, 13V

Vgs(th) (Max) @ Id

3.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

231pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

34W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SUD50P06-15L-T4-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

165nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4950pF @ 25V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMP3007SPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

64.2nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2826pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

Recently Sold

ADM211ARSZ-REEL

ADM211ARSZ-REEL

Analog Devices

IC TRANSCEIVER FULL 4/5 28SSOP

IHLP5050FDER3R3M01

IHLP5050FDER3R3M01

Vishay Dale

FIXED IND 3.3UH 18A 6.8 MOHM SMD

CY7C68013A-56PVXI

CY7C68013A-56PVXI

Cypress Semiconductor

IC MCU USB PERIPH HI SPD 56-SSOP

L9678PTR

L9678PTR

STMicroelectronics

IC SBC FOR AIRBAG 64LQFP

MAX3491EESD

MAX3491EESD

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

1N5614

1N5614

Semtech

DIODE GEN PURP 200V 2A AXIAL

BAT46WJ,115

BAT46WJ,115

Nexperia

DIODE SCHOTTKY 100V 250MA SOD323

1014-12

1014-12

Microsemi

RF TRANS NPN 50V 1.4GHZ 55LT

LTST-S310F2KT

LTST-S310F2KT

Lite-On Inc.

LED RGB CLEAR SMD R/A

DSC6001CI2A-016.0000

DSC6001CI2A-016.0000

Microchip Technology

MEMS OSC XO 16.0000MHZ CMOS SMD

A42MX16-PQ160

A42MX16-PQ160

Microsemi

IC FPGA 125 I/O 160QFP

74HC160N,652

74HC160N,652

NXP

IC SYNC BCD DECADE COUNT 16DIP