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IXFN82N60P

IXFN82N60P

For Reference Only

Part Number IXFN82N60P
PNEDA Part # IXFN82N60P
Description MOSFET N-CH 600V 72A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,336
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN82N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN82N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN82N60P, IXFN82N60P Datasheet (Total Pages: 5, Size: 130.96 KB)
PDFIXFN82N60P Datasheet Cover
IXFN82N60P Datasheet Page 2 IXFN82N60P Datasheet Page 3 IXFN82N60P Datasheet Page 4 IXFN82N60P Datasheet Page 5

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IXFN82N60P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs75mOhm @ 41A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 25V
FET Feature-
Power Dissipation (Max)1040W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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