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IXFN80N50Q2

IXFN80N50Q2

For Reference Only

Part Number IXFN80N50Q2
PNEDA Part # IXFN80N50Q2
Description MOSFET N-CH 500V 80A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,204
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN80N50Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN80N50Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN80N50Q2, IXFN80N50Q2 Datasheet (Total Pages: 4, Size: 111.57 KB)
PDFIXFN80N50Q2 Datasheet Cover
IXFN80N50Q2 Datasheet Page 2 IXFN80N50Q2 Datasheet Page 3 IXFN80N50Q2 Datasheet Page 4

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IXFN80N50Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds12800pF @ 25V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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