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IXFN80N50P

IXFN80N50P

For Reference Only

Part Number IXFN80N50P
PNEDA Part # IXFN80N50P
Description MOSFET N-CH 500V 66A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,160
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN80N50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN80N50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN80N50P, IXFN80N50P Datasheet (Total Pages: 5, Size: 157.15 KB)
PDFIXFN80N50P Datasheet Cover
IXFN80N50P Datasheet Page 2 IXFN80N50P Datasheet Page 3 IXFN80N50P Datasheet Page 4 IXFN80N50P Datasheet Page 5

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IXFN80N50P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs195nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds12700pF @ 25V
FET Feature-
Power Dissipation (Max)700W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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