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IXFN70N120SK

IXFN70N120SK

For Reference Only

Part Number IXFN70N120SK
PNEDA Part # IXFN70N120SK
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,236
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN70N120SK Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN70N120SK
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN70N120SK, IXFN70N120SK Datasheet (Total Pages: 7, Size: 432.49 KB)
PDFIXFN70N120SK Datasheet Cover
IXFN70N120SK Datasheet Page 2 IXFN70N120SK Datasheet Page 3 IXFN70N120SK Datasheet Page 4 IXFN70N120SK Datasheet Page 5 IXFN70N120SK Datasheet Page 6 IXFN70N120SK Datasheet Page 7

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IXFN70N120SK Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs161nC @ 20V
Vgs (Max)+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds2790pF @ 1000V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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